Samsung Starts Producing First 512-Gigabyte Universal Flash Storage for Next-Generation Mobile Devices

Setting a new threshold for mobile storage to handle ever-increasing
amounts of multimedia content

SEOUL, South Korea–(BUSINESS WIRE)–#512GBeUFS–Samsung Electronics Co., Ltd., the world leader in advanced memory
technology, today announced that it has begun mass production of the
industry’s first 512-gigabyte (GB) embedded Universal Flash Storage
(eUFS) solution for use in next-generation mobile devices. Utilizing
Samsung’s latest 64-layer 512-gigabit (Gb) V-NAND chips, the new 512GB
eUFS package provides unparalleled storage capacity and outstanding
performance for upcoming flagship smartphones and tablets.


“The new Samsung 512GB eUFS provides the best embedded storage solution
for next-generation premium smartphones by overcoming potential
limitations in system performance that can occur with the use of micro
SD cards,” said Jaesoo Han, executive vice president of Memory Sales &
Marketing at Samsung Electronics. “By assuring an early, stable supply
of this advanced embedded storage, Samsung is taking a big step forward
in contributing to timely launches of next-generation mobile devices by
mobile manufacturers around the world.”

Consisting of eight 64-layer 512Gb V-NAND chips and a controller chip,
all stacked together, Samsung’s new 512GB UFS doubles the density of
Samsung’s previous 48-layer V-NAND-based 256GB eUFS, in the same amount
of space as the 256GB package. The eUFS’ increased storage capacity will
provide a much more extensive mobile experience. For example, the new
high-capacity eUFS enables a flagship smartphone to store approximately
130 4K Ultra HD (3840×2160) video clips of a 10-minute duration,* which
is about a tenfold increase over a 64GB eUFS which allows storing only
about 13 of the same-sized video clips.

To maximize the performance and energy efficiency of the new 512GB eUFS,
Samsung has introduced a new set of proprietary technologies. The
64-layer 512Gb V-NAND’s advanced circuit design and new power management
technology in the 512GB eUFS’ controller minimize the inevitable
increase in energy consumed, which is particularly noteworthy since the
new 512GB eUFS solution contains twice the number of cells compared to a
256GB eUFS. In addition, the 512GB eUFS’ controller chip speeds up the
mapping process for converting logical block addresses to those of
physical blocks.

The Samsung 512GB eUFS also features strong read and write performance.
With its sequential read and writes reaching up to 860 megabytes per
second (MB/s) and 255MB/s respectively, the 512GB embedded memory
enables transferring a 5GB-equivalent full HD video clip to an SSD in
about six seconds, over eight times faster than a typical microSD card.

For random operations, the new eUFS can read 42,000 IOPS and write
40,000 IOPS. Based on the eUFS’ rapid random writes, which are
approximately 400 times faster than the 100 IOPS speed of a conventional
microSD card, mobile users can enjoy seamless multimedia experiences
such as high-resolution burst shooting, as well as file searching and
video downloading in dual-app viewing mode.

On a related note, Samsung intends to steadily increase an aggressive
production volume for its 64-layer 512Gb V-NAND chips, in addition to
expanding its 256Gb V-NAND production. This should meet the increase in
demand for advanced embedded mobile storage, as well as for premium SSDs
and removable memory cards with high density and performance.

About Samsung Electronics Co., Ltd.

Samsung inspires the world and shapes the future with transformative
ideas and technologies. The company is redefining the worlds of TVs,
smartphones, wearable devices, tablets, digital appliances, network
systems, and memory, system LSI, foundry and LED
solutions. For the latest news, please visit the Samsung Newsroom at http://news.samsung.com.

* Editor’s note: The calculation reflects internal tests where the
averaged actual storage is approximately 93% of the labeled capacity,
and where the preloaded mobile OS uses about 13GB of the capacity on a
flagship smartphone.

Contacts

for Samsung
John E. Lucas, 925-872-2287
j.lucas@partner.samsung.com